Research Associate

I am looking for motivated candidates to join our project on InP-based HEMT devices for THz applications at IIT Delhi.

We are hiring for two Research Associate (RA) positions:

For candidates with experience in semiconductor/nanoelectronic device design, fabrication experience, device characterization experience, RF/microwave measurements, TCAD, or device modelling.

2. Research Associate – TCAD Design of InP HEMT Epilayer, device and modeling

For candidates interested in TCAD-based design and optimization of InP HEMT multilayer epilayer structures and device geometry, with corresponding experience.

PhD (submitted) or MTech with 3 year reaserch experience preferred in both cases.

This is an exciting opportunity to work on III–V semiconductor devices, THz electronics, high-frequency measurements and indigenous technology development.

Interested candidates may apply through the advertisement link below, mail reume on [HIDDEN TEXT] :

https://ird.iitd.ac.in/api/uploadsProjectPositions/project_position_1779867132774_ru2227g.pdf

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